IndiumV3, Main, Repository, bibRecord, 00A408

Terahertz emission by InN

Identifieur interne : 00A408 ( Main/Repository ); précédent : 00A407; suivant : 00A409

Terahertz emission by InN

Auteurs : RBID : Pascal:04-0242408

Descripteurs français

Pascal (Inist)
- 7866F, 8440, 7870G, 6837H, 8115H, 8105E, 6855J, Etude expérimentale, Gallium composé, Indium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Croissance semiconducteur, Couche épitaxique semiconductrice, Epitaxie jet moléculaire, Microscopie électronique balayage, Génération onde submillimétrique.

English descriptors

KwdEn :
- Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Molecular beam epitaxy, Scanning electron microscopy, Semiconductor epitaxial layers, Semiconductor growth, Submillimeter wave generation, Wide band gap semiconductors.

Abstract

We report on optically excited terahertz (THz) emission by indium nitride (InN) thin films. We have used 70 fs titanium-sapphire laser pulses with wavelengths at 800 nm to generate THz-radiation pulses. The InN thin films are deposited on sapphire substrates with GaN buffer layer by molecular-beam epitaxy. The THz-radiation emitted from the InN surface is significantly stronger than that of the GaN/InN interface. The origin of the THz emission are transient photocarrier currents. These results are in agreement with recent experimental results of InN which show that this material is a small band-gap semiconductor. The magnitude of the THz emission from the InN is strong compared to THz emission from previously investigated semiconductors. © 2004 American Institute of Physics.

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Pascal:04-0242408

Le document en format XML

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<author><name sortKey="Ascazubi, Ricardo" uniqKey="Ascazubi R">Ricardo Ascazubi</name>
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<wicri:cityArea>Department of Physics, Applied Physics & Astronomy, Rensselaer Polytechnic Institute, Troy</wicri:cityArea>
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<wicri:cityArea>Department of Physics, SUNY Geneseo, Geneseo</wicri:cityArea>
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<author><name sortKey="Wilke, Ingrid" uniqKey="Wilke I">Ingrid Wilke</name>
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<author><name sortKey="Denniston, Kyle" uniqKey="Denniston K">Kyle Denniston</name>
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<author><name sortKey="Lu, Hai" uniqKey="Lu H">Hai Lu</name>
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<front><div type="abstract" xml:lang="en">We report on optically excited terahertz (THz) emission by indium nitride (InN) thin films. We have used 70 fs titanium-sapphire laser pulses with wavelengths at 800 nm to generate THz-radiation pulses. The InN thin films are deposited on sapphire substrates with GaN buffer layer by molecular-beam epitaxy. The THz-radiation emitted from the InN surface is significantly stronger than that of the GaN/InN interface. The origin of the THz emission are transient photocarrier currents. These results are in agreement with recent experimental results of InN which show that this material is a small band-gap semiconductor. The magnitude of the THz emission from the InN is strong compared to THz emission from previously investigated semiconductors. © 2004 American Institute of Physics.</div>
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Terahertz emission by InN

Terahertz emission by InN

Descripteurs français

English descriptors

Abstract

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